Review and analysis of SiC MOSFETs’ ruggedness and reliability
Open accessAbstract
SiC MOSFETs (silicon carbide metal‐oxide semiconductor field‐effect transistors) are replacing Si insulated gate bipolar transistors in many power conversion applications due to their superior performance. However, ruggedness and reliability of SiC MOSFETs are still big concern for their widespread applications in the market, especially in safety‐critical applications. The objective of this study is to provide a comprehensive picture on the ruggedness and reliability of commercial SiC MOSFETs, discover their failure or degradation mechanism, and propose some possible mitigation methods through both literature survey and in‐depth analysis. The ruggedness of SiC MOSFETs discussed here includes short‐circuit (SC) ruggedness, avalanche ruggedness, and their failure mechanism. The reliability issues include gate oxide reliability, degradation under high‐temperature bias stress, repetitive SC stress, avalanche stress, power cycling stress, body diode's surge current stress, and their degradation mechanism. Furthermore, this study discusses methods and solutions to improve their ruggedness and reliability.
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References 86 · Cited by 221
Research works printed but not linked: 4
- Choyke, W.J., Matsunami, H., Pensl, G.:'Silicon carbide' (Springer Press, Germany, 2004)
- Schaffer, W.J., Kong, H.S., Negley, G.H., et al.: 'Hall effect and CV measurements on epitaxial 6H-and 4H-SiC'. Institute of Physics Conf. Series, Bristol, 1994, Vol. 137, pp. 155-160
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- Authors
- Wang, J., & Jiang, X.
- Affiliations
- Hunan University (CN)
- Corresponding author
- Jiang, Xi
- Venue
- IET Power Electronics
- Published
- 2020-02
- Volume
- 13
- Issue
- 3
- Pages
- 445-455
- ISSN
- 1755-4535 (ISSN-L)
- 1755-4543
- OpenAlex
- W2967146328
- Cited by
- 221
- References
- 86
- Citations by year
- 2026: 34 · 2025: 60 · 2024: 41 · 2023: 40 · 2022: 23 · 2021: 13 · 2020: 9 · 2019: 1
- FWCI
- 4.12
- Type
- journal article
- Language
- en
- Open access
- bronze
- doi.org
- Locations
- IET Power Electronics (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Keywords
- SiC MOSFET, ruggedness, reliability, short-circuit ruggedness, avalanche ruggedness, failure mechanisms, gate oxide reliability, degradation mitigation
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