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Ultra low RIN, low threshold AlGaInAs/InP BH-DFB laser
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Abstract
This study presents a comparative analysis of AlGalnAs buried heterostructure laser diodes by using dual-channel ridge-waveguides. Different shaped channels, including bowl shaped groove and vertical groove, are explored. Using a vertical groove structure, we achieved an output power of 90 mW at 25 °C with a threshold current of only 4 mA. This represents a 3.6-fold increase in output power compared to the BH-DFB structure. At a high temperature of 85 °C, the laser maintains a side-mode suppression ratio of over 45 dB at the maximum power point. The laser’s relative intensity noise in the 0–40 GHz frequency range is less than −162.8 dB/Hz when operated at 300 mA with the chip butterfly packaged. These findings underscore the robustness, reliability, and high-performance capabilities of the developed DFB laser, highlighting its potential for various practical applications.
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Cited by 3
Research works printed but not linked: 12
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Metadata
- Authors
- Ren, J., Xing, Y., Han, J., Sun, T., Xing, Z., Yin, C., & Zhang, B.
- Venue
- Journal of the European Optical Society-Rapid Publications
- Publisher
- EDP Sciences
- Published
- 2024
- Volume
- 20
- Issue
- 1
- Pages
- 23
- ISSN
- 1990-2573
- Cited by
- 3
- Funders
- Ministry of Science and Technology of the People's Republic of China, National Key R&D Program "Information Photon Technology" Key Special Project (2022YFB2802500)
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- Ren, J., Xing, Y., Han, J., Sun, T., Xing, Z., Yin, C., & Zhang, B. (2024). Ultra low RIN, low threshold AlGaInAs/InP BH-DFB laser. Journal of the European Optical Society-Rapid Publications. https://doi.org/10.1051/jeos/2024023
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