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Band structure model and dynamical dielectric function in lowest stages of graphite acceptor compounds

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Blinowski, J., Nguyen Hy Hau, Rigaux, C., Vieren, J.P., Le Toullec, R., Furdin, G., Hérold, A., Melin, J.·1980·Journal de Physique

Abstract

A 2D band structure model is proposed to describe electronic states in the lowest stages (n = 1, 2) of GAC. The tight binding method is applied taking into account intra and interlayer nearest neighbour interactions. From the energies and wavefunctions of the π valence and conduction bands, the frequency dependence of the complex dielectric function is derived. This model enables us to quantitatively analyse recent results of reflectivity in the region of the plasma edge and at higher energy obtained for various GAC (Br2, ICl, SbCl 5, AsF5). From the theoretical fits we deduce the charge transfer coefficient for several classes of GAC.

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Metadata

Authors
Blinowski, J., Hau, N. H., Rigaux, C., Vieren, J. P., Le Toullec, R., Furdin, G., Hérold, A., & Melin, J.
Venue
Journal de Physique
Publisher
EDP Sciences
Published
1980
Volume
41
Issue
1
Pages
47-58
ISSN
0302-0738 (ISSN-L)
OpenAlex
W2053618212
Cited by
282
References
0
FWCI
25.16
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Band structure model and dynamical dielectric function in lowest stages of graphite acceptor compounds. https://app.cochat.ai/papers/10.1051/jphys:0198000410104700
The paper
Blinowski, J., Hau, N. H., Rigaux, C., Vieren, J. P., Le Toullec, R., Furdin, G., Hérold, A., & Melin, J. (1980). Band structure model and dynamical dielectric function in lowest stages of graphite acceptor compounds. Journal de Physique. https://doi.org/10.1051/jphys%3A0198000410104700

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