High electron mobility GaN/Al x Ga1−x N heterostructures grown by low-pressure metalorganic chemical vapor deposition

Khan, M. Asif; Van Hove, J. M.; Kuznia, J. N.; Olson, D. T.

doi:10.1063/1.104886

High electron mobility GaN/Al x Ga1−x N heterostructures grown by low-pressure metalorganic chemical vapor deposition

In this letter we report the first observation of enhanced electron mobility in GaN/AlxGa1−xN heterojunctions. These structures were deposited on basal plane sapphire using low-pressure metalorganic chemical vapor deposition. The electron mobility of a single heterojunction composed of 500 Å of A…