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Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes
Abstract
Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double-barrier resonant-tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm−2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid-state electronic oscillator at room temperature.
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Metadata
- Authors
- Brown, E. R., Söderström, J. R., Parker, C. D., Mahoney, L. J., Molvar, K. M., & McGill, T. C.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1991-05-20
- Volume
- 58
- Issue
- 20
- Pages
- 2291-2293
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2051797691
- Cited by
- 796
- References
- 0
- FWCI
- 37.34
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes. https://app.cochat.ai/papers/10.1063/1.104902
- The paper
- Brown, E. R., Söderström, J. R., Parker, C. D., Mahoney, L. J., Molvar, K. M., & McGill, T. C. (1991). Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes. Applied Physics Letters. https://doi.org/10.1063/1.104902
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
