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Cited by 174

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Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injection

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Ralph, Stephen E., Grischkowsky, D.·1991·Applied Physics Letters
DOI 10.1063/1.106153
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Abstract

We report extremely large field enhancement near the anode of an electrically biased metal/semi-insulator/metal structure. The large anode field results from a trap-enhanced space-charge region and is large enough to cause injection of holes at the anode. Our numerical simulations confirm this interpretation and show that for typical semi-insulating GaAs, large trap-enhanced fields (TEF) are to be expected. The TEF effect, contrary to that observed in doped materials, is enhanced by optical injection of carriers near the anode, and can be exploited for the efficient generation of ultrafast THz radiation.

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Metadata

Authors
Ralph, S. E., & Grischkowsky, D.
Venue
Applied Physics Letters
Publisher
AIP Publishing
Published
1991-10-14
Volume
59
Issue
16
Pages
1972-1974
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
DOI
10.1063/1.106153
OpenAlex
W1974714817
Cited by
174
References
0
FWCI
10.14
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injection. https://app.cochat.ai/papers/10.1063/1.106153
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Ralph, S. E., & Grischkowsky, D. (1991). Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injection. Applied Physics Letters. https://doi.org/10.1063/1.106153

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.