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Time-resolved optical characterization of InGaAs/GaAs quantum dots
Abstract
We report on the optical characterization of the strained InGaAs/GaAs quantum dots (QDs). The temperature dependence of the photoluminescence (PL) indicates that the onset energy of the thermal quenching in ∼20-nm-diam QDs is enhanced by a factor of ∼2 as compared to a quantum well (QW), due to the additional confinement. At low temperature, an increased carrier lifetime is observed for the QDs as compared to a reference QW (880 vs 330 ps). The carrier lifetime in the QDs was found to be independent of the temperature for T<30 K. In addition to this different dynamics of the localized excitons, we find that in the steady state PL and PL excitation, there is virtually no overlap between the emission and the absorption energies.
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Cited by
Chemistry and Properties of Nanocrystals of Different Shapes
Burda, C., Chen, X., Narayanan, R., & El-Sayed, M. A. (2005) · Chemical Reviews · doi:10.1021/cr030063a · Cited by 7,230
Critical layer thickness for self-assembled InAs islands on GaAs
Leonard, D., Pond, K., & Petroff, P. M. (1994) · Physical Review B · doi:10.1103/physrevb.50.11687 · Cited by 963
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Metadata
- Authors
- Wang, G., Fafard, S., Leonard, D., Bowers, J. E., Merz, J. L., & Petroff, P. M.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1994-05-23
- Volume
- 64
- Issue
- 21
- Pages
- 2815-2817
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2078661198
- Cited by
- 234
- References
- 0
- FWCI
- 13.43
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Time-resolved optical characterization of InGaAs/GaAs quantum dots. https://app.cochat.ai/papers/10.1063/1.111434
- The paper
- Wang, G., Fafard, S., Leonard, D., Bowers, J. E., Merz, J. L., & Petroff, P. M. (1994). Time-resolved optical characterization of InGaAs/GaAs quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.111434
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