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Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al x Ga1−x)0.5In0.5P/GaP light-emitting diodes
Abstract
Data are presented demonstrating the operation of transparent-substrate (TS) (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes (LEDs) whose efficiency exceeds that afforded by all other current LED technologies in the green to red (560–630 nm) spectral regime. A maximum luminous efficiency of 41.5 lm/W (93.2 lm/A) is realized at λ∼604 nm (20 mA, direct current). The TS (AlxGa1−x)0.5In0.5P/GaP LEDs are fabricated by selectively removing the absorbing n-type GaAs substrate of a p-n (AlxGa1−x)0.5In0.5P double heterostructure LED and wafer bonding a ‘‘transparent’’ n-GaP substrate in its place. The resulting TS (AlxGa1−x)0.5In0.5P/GaP LED lamps exhibit a twofold improvement in light output compared to absorbing-substrate (AS) (AlxGa1−x)0.5In0.5P/GaAs lamps.
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Cited by
Efficient InGaN-based yellow-light-emitting diodes
Jiang, F., Zhang, J., Xu, L., Ding, J., Wang, G., Wu, X., Wang, X., Mo, C., Quan, Z., Guo, X., et al. (2019) · Photonics Research · doi:10.1364/prj.7.000144 · Cited by 182
Epitaxial Bragg Mirrors for the Mid-Infrared and Their Applications
Heiss, W. (2001) · Progress in Quantum Electronics · doi:10.1016/s0079-6727(01)00011-8 · Cited by 60
Metadata
- Authors
- Kish, F. A., Steranka, F. M., DeFevere, D. C., Vanderwater, D. A., Park, K. G., Kuo, C. P., Osentowski, T. D., Peanasky, M. J., Yu, J. G., Fletcher, R. M., Steigerwald, D. A., Craford, M. G., & Robbins, V. M.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1994-05-23
- Volume
- 64
- Issue
- 21
- Pages
- 2839-2841
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2079138283
- Cited by
- 259
- References
- 0
- FWCI
- 9.61
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kish, F. A., Steranka, F. M., DeFevere, D. C., Vanderwater, D. A., Park, K. G., Kuo, C. P., Osentowski, T. D., Peanasky, M. J., Yu, J. G., Fletcher, R. M., Steigerwald, D. A., Craford, M. G., & Robbins, V. M. (1994). Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al x Ga1−x)0.5In0.5P/GaP light-emitting diodes. Applied Physics Letters. https://doi.org/10.1063/1.111442
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
