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Molecular design of hole transport materials for obtaining high durability in organic electroluminescent diodes

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Adachi, Chihaya, Nagai, Kazukiyo, Tamoto, Nozomu·1995·Applied Physics Letters

Abstract

The molecular design of hole transport materials (HTMs) for producing high durability in organic layered electroluminescent (EL) diodes was elucidated. The durability tests were examined using fourteen hole transport materials in the cell structure of an anode/hole transport layer (HTL)/emitter layer (EML)/cathode. The ionization potential (Ip) of HTLs was found to be the dominant factor for obtaining high durability in organic EL devices. The formation of the small energy barrier at the interface of a HTL/anode was required for high durability. Moreover, no straightforward relations between melting point, glass transition temperature of the HTMs, and durability of the EL devices were observed. The EL device using the HTM having a low Ip (5.08 eV) showed an especially remarkable stability. In this case, the half-life period of the initial luminance was beyond 500 h.

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Metadata

Authors
Adachi, C., Nagai, K., & Tamoto, N.
Venue
Applied Physics Letters
Published
1995-05-15
Volume
66
Issue
20
Pages
2679-2681
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2056577058
Cited by
410
References
0
FWCI
30.66
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Molecular design of hole transport materials for obtaining high durability in organic electroluminescent diodes. https://app.cochat.ai/papers/10.1063/1.113123
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Adachi, C., Nagai, K., & Tamoto, N. (1995). Molecular design of hole transport materials for obtaining high durability in organic electroluminescent diodes. Applied Physics Letters. https://doi.org/10.1063/1.113123

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