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Red shift of plasmon resonance frequency due to the interacting Ag nanoparticles embedded in single crystal SiO2 by implantation
Abstract
A metal nanoparticle system has been prepared by 200 Kev Ag+ ion implantation into perfect single crystal SiO2 at room temperature to dose: 6.7×1016/cm2. The system presents quasidual-layer structure: the shallower implanted layer containing noninteracting small Ag nanoparticles and the deeper layer containing interacting large nanoparticles, in which great red shift, about 1 eV, comparing with the plasmon resonance frequency of the noninteracting nanoparticle, can be clearly observed. The red shift is attributed to the multipoles interaction among the high density nanoparticles at external electric field. Moreover, the magnitude of red shift increases with implanted dose.
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Cites
Beiträge zur Optik trüber Medien, speziell kolloidaler Metallösungen
Mie, G. (1908) · Annalen der Physik · doi:10.1002/andp.19083300302 · Cited by 11,537
Cited by
Ghosh, S. K., & Pal, T. (2007) · Chemical Reviews · doi:10.1021/cr0680282 · Cited by 2,782
Parametric Simulations of Slanted 1D Photonic Crystal Sensors
Breuer-Weil, A., Almasoud, N. N., Abbasi, B., Yetisen, A. K., Yun, S.-H., & Butt, H. (2016) · Nanoscale Research Letters · doi:10.1186/s11671-016-1321-0 · Cited by 11
Metadata
- Authors
- Liu, Z., Wang, H., Li, H., & Wang, X.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1998-04-13
- Volume
- 72
- Issue
- 15
- Pages
- 1823-1825
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2149825984
- Cited by
- 159
- References
- 1
- FWCI
- 1.96
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Red shift of plasmon resonance frequency due to the interacting Ag nanoparticles embedded in single crystal SiO2 by implantation. https://app.cochat.ai/papers/10.1063/1.121196
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- Liu, Z., Wang, H., Li, H., & Wang, X. (1998). Red shift of plasmon resonance frequency due to the interacting Ag nanoparticles embedded in single crystal SiO2 by implantation. Applied Physics Letters. https://doi.org/10.1063/1.121196
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