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Mg x Zn 1−x O as a II–VI widegap semiconductor alloy
Open accessAbstract
We propose a widegap II–VI semiconductor alloy, MgxZn1−xO, for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO. The c-axis oriented MgxZn1−xO films were epitaxially grown by pulsed laser deposition on ZnO epitaxial films and sapphire (0001) substrates using ceramic targets. Solid solution films were prepared with Mg content up to x=0.33, achieving a band gap of 3.99 eV at room temperature. MgO impurity phase segregated at x⩾0.36. Lattice constants of MgxZn1−xO films changed slightly (∼1%), increasing in a axis and decreasing in c-axis direction with increasing x. These films showed ultraviolet photoluminescence at energies from 3.36 (x=0) to 3.87 eV (x=0.33) at 4.2 K.
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Cites
Shannon, R. D. (1976) · Acta Crystallographica Section A · doi:10.1107/s0567739476001551 · Cited by 66,145
Cited by
65 years of ZnO research – old and very recent results
Klingshirn, C., Fallert, J., Zhou, H., Sartor, J., Thiele, C., Maier‐Flaig, F., Schneider, D., & Kalt, H. (2010) · physica status solidi (b) · doi:10.1002/pssb.200983195 · Cited by 406
ZnO as a Material Mostly Adapted for the Realization of Room-Temperature Polariton Lasers
Zamfirescu, M., Kavokin, A., Gil, B., Malpuech, G., & Kaliteevski, M. (2002) · Physical Review B · doi:10.1103/physrevb.65.161205 · Cited by 395
Janotti, A., Segev, D., & Van de Walle, C. G. (2006) · Physical Review B · doi:10.1103/physrevb.74.045202 · Cited by 353
Metadata
- Authors
- Ohtomo, A., Kawasaki, M., Koida, T., Masubuchi, K., Koinuma, H., Sakurai, Y., Yoshida, Y., Yasuda, T., & Segawa, Y.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1998-05-11
- Volume
- 72
- Issue
- 19
- Pages
- 2466-2468
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1610206726
- Cited by
- 1,508
- References
- 1
- FWCI
- 14.84
- Type
- journal article
- Language
- en
- Open access
- green
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- Ohtomo, A., Kawasaki, M., Koida, T., Masubuchi, K., Koinuma, H., Sakurai, Y., Yoshida, Y., Yasuda, T., & Segawa, Y. (1998). Mg x Zn 1−x O as a II–VI widegap semiconductor alloy. Applied Physics Letters. https://doi.org/10.1063/1.121384
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