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Electronic states tuning of InAs self-assembled quantum dots
Open accessAbstract
We demonstrate the dimensional tuning of InAs self-assembled quantum dots (QDs) by changing the growth kinetics during the capping of InAs islands with GaAs. Modifying the growth sequence during the capping of InAs islands, allows us to tune the thickness and lateral dimensions of the QDs while keeping the wetting layer thickness constant. Using the same method but embedding the tuned InAs islands into AlAs layers allows to further blueshift the photoluminescence emission to higher energies while keeping the wetting layer thickness constant. The main process responsible for the QDs size modification is consistent with a kinetically controlled materials redistribution of the InAs islands that minimizes the energy of the epitaxial layers at the start up of the GaAs capping deposition.
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Cited by
Bright single photon source based on self-aligned quantum dot–cavity systems
Maier, S., Gold, P., Forchel, A., Gregersen, N., Mørk, J., Höfling, S., Schneider, C., & Kamp, M. (2014) · Optics Express · doi:10.1364/oe.22.008136 · Cited by 57
Metadata
- Authors
- Garcı́a, J. M., Mankad, T., Holtz, P. O., Wellman, P. J., & Petroff, P. M.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1998-06-15
- Volume
- 72
- Issue
- 24
- Pages
- 3172-3174
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2084237064
- Cited by
- 160
- References
- 0
- FWCI
- 10.06
- Type
- journal article
- Language
- en
- Open access
- green
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- Garcı́a, J. M., Mankad, T., Holtz, P. O., Wellman, P. J., & Petroff, P. M. (1998). Electronic states tuning of InAs self-assembled quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.121583
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