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Cited by 276

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

High-Q wet-etched GaAs microdisks containing InAs quantum boxes

Gayral, B., Gérard, J. M., Lemaı̂tre, A., Dupuis, C., Manin, L., Pelouard, J. L.·1999·Applied Physics Letters

Abstract

A two-steps wet-etching fabrication process producing high-quality GaAs microdisks is presented. We report an optical characterization of these microdisks, using the photoluminescence of InAs quantum boxes as an internal light source. Thanks to an improved smoothness of the microdisk sidewall, cavity Q’s as high as 12 000 are observed, which opens very challenging novel application prospects for semiconductor microdisks.

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Crossref · 10.1063/1.124894

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Metadata

Authors
Gayral, B., Gérard, J. M., Lemaı̂tre, A., Dupuis, C., Manin, L., & Pelouard, J. L.
Venue
Applied Physics Letters
Published
1999-09-27
Volume
75
Issue
13
Pages
1908-1910
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2014402331
Cited by
276
References
1
FWCI
6.29
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: High-Q wet-etched GaAs microdisks containing InAs quantum boxes. https://app.cochat.ai/papers/10.1063/1.124894
The paper
Gayral, B., Gérard, J. M., Lemaı̂tre, A., Dupuis, C., Manin, L., & Pelouard, J. L. (1999). High-Q wet-etched GaAs microdisks containing InAs quantum boxes. Applied Physics Letters. https://doi.org/10.1063/1.124894

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.