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High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
Abstract
A truncated-inverted-pyramid (TIP) chip geometry provides substantial improvement in light extraction efficiency over conventional AlGaInP/GaP chips of the same active junction area (∼0.25 mm2). The TIP geometry decreases the mean photon path-length within the crystal, and thus reduces the effects of internal loss mechanisms. By combining this improved device geometry with high-efficiency multiwell active layers, record-level performance for visible-spectrum light-emitting diodes is achieved. Peak efficiencies exceeding 100 lm/W are demonstrated (100 mA dc, 300 K) for orange-emitting (λp∼610 nm) devices, with a peak luminous flux of 60 lumens (350 mA dc, 300 K). In the red wavelength regime (λp∼650 nm), peak external quantum efficiencies of 55% and 60.9% are measured under direct current and pulsed operation, respectively (100 mA, 300 K).
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Cited by
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Chen, J., Loeb, S., & Kim, J.-H. (2017) · Environmental Science: Water Research & Technology · doi:10.1039/c6ew00241b · Cited by 331
Enhancement of Light Extraction from Light Emitting Diodes
Zhmakin, A. I. (2011) · Physics Reports · doi:10.1016/j.physrep.2010.11.001 · Cited by 312
Efficient InGaN-based yellow-light-emitting diodes
Jiang, F., Zhang, J., Xu, L., Ding, J., Wang, G., Wu, X., Wang, X., Mo, C., Quan, Z., Guo, X., et al. (2019) · Photonics Research · doi:10.1364/prj.7.000144 · Cited by 182
Metadata
- Authors
- Krames, M. R., Ochiai-Holcomb, M., Höfler, G. E., Carter-Coman, C., Chen, E. I., Tan, I.-H., Grillot, P., Gardner, N. F., Chui, H. C., Huang, J.-W., Stockman, S. A., Kish, F. A., Craford, M. G., Tan, T. S., Kocot, C. P., Hueschen, M., Posselt, J., Loh, B., Sasser, G., & Collins, D.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1999-10-18
- Volume
- 75
- Issue
- 16
- Pages
- 2365-2367
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1601036094
- Cited by
- 456
- References
- 0
- FWCI
- 20.91
- Type
- journal article
- Language
- en
- Open access
- closed
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- The paper
- Krames, M. R., Ochiai-Holcomb, M., Höfler, G. E., Carter-Coman, C., Chen, E. I., Tan, I.-H., Grillot, P., Gardner, N. F., Chui, H. C., Huang, J.-W., Stockman, S. A., Kish, F. A., Craford, M. G., Tan, T. S., Kocot, C. P., Hueschen, M., Posselt, J., Loh, B., Sasser, G., & Collins, D. (1999). High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency. Applied Physics Letters. https://doi.org/10.1063/1.125016
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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