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Fabrication of transparent p–n heterojunction thin film diodes based entirely on oxide semiconductors

Kudo, Atsushi, Yanagi, Hiroshi, Ueda, Kazushige, Hosono, Hideo, Kawazoe, Hiroshi, Yano, Yoshihiko·1999·Applied Physics Letters

Abstract

All oxide-based, transparent polycrystalline p–n heterojunctions on a glass substrate were fabricated. The structure of the diode was n+-ZnO electrode/n-ZnO/p-SrCu2O2/In2−xSnxO3 electrode on the substrate. The contact between the n- and p-type semiconducting oxides was found to be rectifying. The ratio of forward current to the reverse current exceeded 80 within the range of applied voltages of −1.5 to +1.5 V and the estimated diode factor (n value) was 1.62. The diode structure was fabricated on a glass plate with the total thickness of 1.3 μm and possessed an optical transmission of 70%–80% in the visible region.

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Metadata

Authors
Kudo, A., Yanagi, H., Ueda, K., Hosono, H., Kawazoe, H., & Yano, Y.
Venue
Applied Physics Letters
Published
1999-11-01
Volume
75
Issue
18
Pages
2851-2853
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2045801397
Cited by
199
References
0
FWCI
9.15
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Fabrication of transparent p–n heterojunction thin film diodes based entirely on oxide semiconductors. https://app.cochat.ai/papers/10.1063/1.125171
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Kudo, A., Yanagi, H., Ueda, K., Hosono, H., Kawazoe, H., & Yano, Y. (1999). Fabrication of transparent p–n heterojunction thin film diodes based entirely on oxide semiconductors. Applied Physics Letters. https://doi.org/10.1063/1.125171

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