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Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties

Li, Y., Meng, G. W., Zhang, L. D., Phillipp, F.·2000·Applied Physics Letters

Abstract

Ordered semiconductor ZnO nanowire arrays embedded in anodic alumina membranes (AAM) were fabricated by generating alumina templates with nanochannels, electrodepositing Zn in them, and then oxidizing the Zn nanowire arrays. The polycrystalline ZnO nanowires with the diameters ranging from 15 to 90 nm were uniformly assembled into the hexagonally ordered nanochannels of the AAM. Photoluminescence (PL) measurements show a blue PL band in the wavelength range of 450–650 nm caused by the singly ionized oxygen vacancy in ZnO nanowires.

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Metadata

Authors
Li, Y., Meng, G. W., Zhang, L. D., & Phillipp, F.
Venue
Applied Physics Letters
Published
2000-04-10
Volume
76
Issue
15
Pages
2011-2013
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2019952087
Cited by
995
References
0
FWCI
29.17
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties. https://app.cochat.ai/papers/10.1063/1.126238
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Li, Y., Meng, G. W., Zhang, L. D., & Phillipp, F. (2000). Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties. Applied Physics Letters. https://doi.org/10.1063/1.126238

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