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Silicon nanowire devices

Chung, Sung-Wook, Yu, Jae-Young, Heath, James R.·2000·Applied Physics Letters

Abstract

Transport measurements were carried out on 15–35 nm diameter silicon nanowires grown using SiH4 chemical vapor deposition via Au or Zn particle-nucleated vapor-liquid-solid growth at 440 °C. Both Al and Ti/Au contacts to the wires were investigated. The wires, as produced, were essentially intrinsic, although Au nucleated wires exhibited a slightly higher conductance. Thermal treatment of the fabricated devices resulted in better electrical contacts, as well as diffusion of dopant atoms into the nanowires, and increased the nanowire conductance by as much as 104. Three terminal devices indicate that the doping of the wires is p type.

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Metadata

Authors
Chung, S.-W., Yu, J.-Y., & Heath, J. R.
Venue
Applied Physics Letters
Published
2000-04-10
Volume
76
Issue
15
Pages
2068-2070
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2091319487
Cited by
377
References
0
FWCI
15.49
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Silicon nanowire devices. https://app.cochat.ai/papers/10.1063/1.126257
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Chung, S.-W., Yu, J.-Y., & Heath, J. R. (2000). Silicon nanowire devices. Applied Physics Letters. https://doi.org/10.1063/1.126257

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.