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Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals
Open accessAbstract
Materials showing reversible resistive switching are attractive for today’s semiconductor technology with its wide interest in nonvolatile random-access memories. In doped SrTiO3 single crystals, we found a dc-current-induced reversible insulator–conductor transition with resistance changes of up to five orders of magnitude. This conducting state allows extremely reproducible switching between different impedance states by current pulses with a performance required for nonvolatile memories. The results indicate a type of charge-induced bulk electronic change as a prerequisite for the memory effect, scaling down to nanometer-range electrode sizes in thin films.
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Cites
Evidence for stripe correlations of spins and holes in copper oxide superconductors
Tranquada, J. M., Sternlieb, B. J., Axe, J. D., Nakamura, Y., & Uchida, S. (1995) · Nature · doi:10.1038/375561a0 · Cited by 3,144
Switching phenomena in titanium oxide thin films
Argall, F. (1968) · Solid-State Electronics · doi:10.1016/0038-1101(68)90092-0 · Cited by 308
Cited by
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Observation of conducting filament growth in nanoscale resistive memories
Yang, Y., Gao, P., Gaba, S., Chang, T., Pan, X., & Lu, W. (2012) · Nature Communications · doi:10.1038/ncomms1737 · Cited by 1,208
Metadata
- Authors
- Watanabe, Y., Bednorz, J. G., Bietsch, A., Gerber, C., Widmer, D., Beck, A., & Wind, S. J.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2001-06-04
- Volume
- 78
- Issue
- 23
- Pages
- 3738-3740
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2051844407
- Cited by
- 522
- References
- 2
- FWCI
- 7.53
- Type
- journal article
- Language
- en
- Open access
- bronze
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- Watanabe, Y., Bednorz, J. G., Bietsch, A., Gerber, C., Widmer, D., Beck, A., & Wind, S. J. (2001). Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals. Applied Physics Letters. https://doi.org/10.1063/1.1377617
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