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All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion

Eyres, L. A., Tourreau, P. J., Pinguet, T. J., Ebert, C. B., Harris, J. S., Fejer, M. M., Becouarn, L., Gerard, B., Lallier, E.·2001·Applied Physics Letters

Abstract

Orientation-patterned GaAs (OPGaAs) films of 200 μm thickness have been grown by hydride vapor phase epitaxy (HVPE) on an orientation-patterned template fabricated by molecular beam epitaxy (MBE). Fabrication of the templates utilized only MBE and chemical etching, taking advantage of GaAs/Ge/GaAs heteroepitaxy to control the crystal orientation of the top GaAs film relative to the substrate. Antiphase domain boundaries were observed to propagate vertically under HVPE growth conditions so that the domain duty cycle was preserved through the thick GaAs for all domain periods attempted. Quasiphase-matched frequency doubling of a CO2 laser was demonstrated with the beam confocally focused through a 4.6 mm long OPGaAs film.

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Metadata

Authors
Eyres, L. A., Tourreau, P. J., Pinguet, T. J., Ebert, C. B., Harris, J. S., Fejer, M. M., Becouarn, L., Gerard, B., & Lallier, E.
Venue
Applied Physics Letters
Published
2001-08-13
Volume
79
Issue
7
Pages
904-906
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1971407024
Cited by
237
References
0
FWCI
7.07
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion. https://app.cochat.ai/papers/10.1063/1.1389326
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Eyres, L. A., Tourreau, P. J., Pinguet, T. J., Ebert, C. B., Harris, J. S., Fejer, M. M., Becouarn, L., Gerard, B., & Lallier, E. (2001). All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion. Applied Physics Letters. https://doi.org/10.1063/1.1389326

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