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Cited by 204

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Electrical current distribution across a metal–insulator–metal structure during bistable switching

Open access
Rossel, C., Meijer, G. I., Brémaud, D., Widmer, D.·2001·Journal of Applied Physics

Abstract

Combining scanning electron microscopy and electron-beam-induced current imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect.

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Crossref · 10.1063/1.1389522

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Metadata

Authors
Rossel, C., Meijer, G. I., Brémaud, D., & Widmer, D.
Venue
Journal of Applied Physics
Published
2001-09-15
Volume
90
Issue
6
Pages
2892-2898
ISSN
  • 0021-8979 (ISSN-L)
  • 1089-7550
OpenAlex
W1994068948
Cited by
204
References
1
FWCI
3.35
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Electrical current distribution across a metal–insulator–metal structure during bistable switching. https://app.cochat.ai/papers/10.1063/1.1389522
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Rossel, C., Meijer, G. I., Brémaud, D., & Widmer, D. (2001). Electrical current distribution across a metal–insulator–metal structure during bistable switching. Journal of Applied Physics. https://doi.org/10.1063/1.1389522

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.