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Bulk electronic structure of SrTiO3: Experiment and theory
Abstract
Valence electron-energy loss spectroscopy (VEELS) in a dedicated scanning transmission electron microscope, vacuum ultraviolet spectroscopy and spectroscopic ellipsometry, and ab initio band structure calculations in the local density approximation have been used to determine the optical properties and the electronic structure of SrTiO3. Assignments of the interband transitions in the electronic structure of bulk SrTiO3 have been determined quantitatively by comparison of VEELS spectra with vacuum ultraviolet spectra and with the ab initio calculated densities of states. The experimentally determined indirect band gap energy is 3.25 eV, while the direct band gap energy is 3.75 eV. The conduction bands in SrTiO3 correspond to the bands composed of mainly Ti 3d t2g and eg states, followed at higher energies by the bands of Sr 4d t2g and eg states, and free electron like states dominating at energies above 15 eV. The upper valence band (UVB) contains 18 electrons in dominantly O 2p states, hybridized with Ti and Sr states, and has a bandwidth of 5 eV. The interband transitions from the UVB to the Ti 3d bands and to the Sr 4d bands give rise to the transitions spanning from the indirect band gap energy of 3.25 eV up to 15 eV. The lower valence band contains 12 electrons in Sr 4p and O 2s states which are separated by 2 eV, while having a bandwidth of 5 eV. The interband transitions from the Sr 4p to the Ti 3d and Sr 4d bands give rise to transition energies spanning from 15 to 24 eV. Interband transitions from the O 2s band to the conduction bands appear at 26 eV. A very narrow band at −33 eV below the top of the valence band is composed of Sr 4s and Ti 3p states and contains eight electrons.
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Cites
Self-Consistent Equations Including Exchange and Correlation Effects
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High-κ perovskite membranes as insulators for two-dimensional transistors
Huang, J.-K., Wan, Y., Shi, J., Zhang, J., Wang, Z., Wang, W., Yang, N., Liu, Y., Lin, C.-H., Guan, X., et al. (2022) · Nature · doi:10.1038/s41586-022-04588-2 · Cited by 373
Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction
Chambers, S. A., Engelhard, M. H., Shutthanandan, V., Zhu, Z., Droubay, T. C., Qiao, L., Sushko, P. V., Feng, T., Lee, H. D., Gustafsson, T., et al. (2010) · Surface Science Reports · doi:10.1016/j.surfrep.2010.09.001 · Cited by 276
Metadata
- Authors
- van Benthem, K., Elsässer, C., & French, R. H.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2001-12-15
- Volume
- 90
- Issue
- 12
- Pages
- 6156-6164
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1643713250
- Cited by
- 981
- References
- 2
- FWCI
- 7.01
- Type
- journal article
- Language
- en
- Open access
- closed
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