The DOI matches its Crossref record; 10 of the 10 references it cites were found in a registry or an index.
Study of terahertz radiation from InAs and InSb
Abstract
Terahertz radiation from InSb and InAS, which are typical narrow band-gap semiconductors, was investigated using time-resolved THz emission measurements. When we compared between the polarity of the THz waveforms of these narrow band-gap semiconductors with that of InP, which is a wide bandgap semiconductor, we concluded that the ultrafast buildup of the photo-Dember field is the main mechanism for the emission of THz radiation in both InAs and InSb. The emission efficiency of InSb is approximately one-hundredth of that of InAs, although the electron mobility in InSb is higher than in InAs. Wavelength-dependent measurements implied that the anomalously low THz emission efficiency of InSb might be due to a reduction in transient mobility resulting from the scattering of electrons into the low-mobility L valley.
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“In longitudinal photo-Dember THz emitters such as InAs crystals32,33, excited electrons near the crystal surface diffuse more quickly into the bulk than the corresponding holes, creating currents in the direction normal to the surface (i.e., out-of-plane electric dipole).”
From Ultrafast terahertz emission from emerging symmetry-broken materials (2023) · cites this paper as [32]
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Cites
Semiconductor Surfaces and Interfaces
Mönch, W. (1993) · Springer series in surface sciences · doi:10.1007/978-3-662-02882-7 · Cited by 1,017
Terahertz optical rectification from 〈110〉 zinc-blende crystals
Rice, A., Jin, Y., Ma, X. F., Zhang, X.-C., Bliss, D. F., Larkin, J. J., & Alexander, M. (1994) · Applied Physics Letters · doi:10.1063/1.111922 · Cited by 436
Self-citationOptoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics
Zhang, X.-C., & Auston, D. H. (1992) · Journal of Applied Physics · doi:10.1063/1.350710 · Cited by 427
Self-citationOptical rectification at semiconductor surfaces
Chuang, S. L., Schmitt-Rink, S., Greene, B. I., Saeta, P. N., & Levi, A. F. J. (1992) · Physical Review Letters · doi:10.1103/physrevlett.68.102 · Cited by 316
Electro-optic transceivers for terahertz-wave applications
Chen, Q., Tani, M., Jiang, Z., & Zhang, X. (2001) · Journal of the Optical Society of America B · doi:10.1364/josab.18.000823 · Cited by 205
Self-citationTHz electromagnetic emission by coherent infrared-active phonons
Dekorsy, T., Auer, H., Bakker, H. J., Roskos, H. G., & Kurz, H. (1996) · Physical review. B, Condensed matter · doi:10.1103/physrevb.53.4005 · Cited by 205
Direct Subpicosecond Measurement of Carrier Mobility of Photoexcited Electrons in Gallium Arsenide
Nuss, M. C., Auston, D. H., & Capasso, F. (1987) · Physical Review Letters · doi:10.1103/physrevlett.58.2355 · Cited by 202
Bonvalet, A., Joffre, M., Martin, J. L., & Migus, A. (1995) · Applied Physics Letters · doi:10.1063/1.114838 · Cited by 191
Weber, M. J. (2010) · CRC Press eBooks · doi:10.1201/9781420050172 · Cited by 136
Infrared wavelength and temperature dependence of optically induced terahertz radiation from InSb
Howells, S. C., Herrera, S. D., & Schlie, L. A. (1994) · Applied Physics Letters · doi:10.1063/1.112542 · Cited by 44
Research works printed but not linked: 1
- 1998, Appl. Phys. Lett., 84, 654
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Exploring Dynamics in the Far-Infrared with Terahertz Spectroscopy
Schmuttenmaer, C. A. (2004) · Chemical Reviews · doi:10.1021/cr020685g · Cited by 654
Terahertz Spectroscopy and Imaging for Defense and Security Applications
Liu, H.-B., Zhong, H., Karpowicz, N., Chen, Y., & Zhang, X.-C. (2007) · Proceedings of the IEEE · doi:10.1109/jproc.2007.898903 · Cited by 653
Self-citationReview of terahertz photoconductive antenna technology
Burford, N. M., & El-Shenawee, M. O. (2017) · Optical Engineering · doi:10.1117/1.oe.56.1.010901 · Cited by 475
Terahertz electromagnetic interactions with biological matter and their applications
Son, J. (2009) · Journal of Applied Physics · doi:10.1063/1.3116140 · Cited by 216
Halide‐Perovskite Resonant Nanophotonics
Makarov, S., Furasova, A. D., Tiguntseva, E. Y., Hemmetter, A., Berestennikov, A. S., Pushkarev, A. P., Zakhidov, A. A., & Kivshar, Y. S. (2018) · Advanced Optical Materials · doi:10.1002/adom.201800784 · Cited by 196
Metadata
- Authors
- Gu, P., Tani, M., Kono, S., Sakai, K., & Zhang, X.-C.
- Affiliations
- Kansai Advanced Research Center, Communications Research Laboratory 588-2 Iwaoka, Kobe 651-2492, Japan
- Rensselaer Polytechnic Institute (US)
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2002-05-01
- Volume
- 91
- Issue
- 9
- Pages
- 5533-5537
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1965561066
- Cited by
- 326
- References
- 10
- Citations by year
- 2026: 8 · 2025: 6 · 2024: 18 · 2023: 10 · 2022: 10 · 2021: 17 · 2020: 14 · 2019: 12 · 2018: 17 · 2017: 23 · 2016: 7 · 2015: 16 · 2014: 13 · 2013: 11 · 2012: 9
- FWCI
- 10.15
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Applied Physics (publishedVersion)
- Funders
- Japan Science and Technology Agency
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Terahertz technology and applications
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Laser-Matter Interactions and Applications
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Semiconductor Detectors and Materials
- Keywords
- terahertz radiation, InAs, indium antimonide, narrow-gap semiconductors, photo-Dember effect, electron scattering, L valley, emission efficiency
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