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Controlling doping and carrier injection in carbon nanotube transistors
Abstract
Carbon nanotube field-effect transistors (CNTFETs) fabricated out of as-grown nanotubes are unipolar p-type devices. Two methods for their conversion from p- to n-type devices are presented. The first method involves conventional doping with an electron donor, while the second consists of annealing the contacts in vacuum to remove adsorbed oxygen. A comparison of these methods shows fundamental differences in the mechanism of the transformation. The key finding is that the main effect of oxygen adsorption is not to dope the bulk of the tube, but to modify the barriers at the metal–semiconductor contacts. The oxygen concentration and the level of doping of the nanotube are therefore complementary in controlling the CNTFET characteristics. Finally, a method of controlling individually the contact barriers by local heating is demonstrated.
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Citations
Cited by
Wang, H., Maiyalagan, T., & Wang, X. (2012) · ACS Catalysis · doi:10.1021/cs200652y · Cited by 3,618
Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs
Brady, G. J., Way, A. J., Safron, N. S., Evensen, H. T., Gopalan, P., & Arnold, M. S. (2016) · Science Advances · doi:10.1126/sciadv.1601240 · Cited by 359
Reversible, Band-Gap-Selective Protonation of Single-Walled Carbon Nanotubes in Solution
Strano, M. S., Huffman, C. B., Moore, V. C., O'Connell, M. J., Haroz, E. H., Hubbard, J., Miller, M., Rialon, K., Kittrell, C., Ramesh, S., et al. (2003) · The Journal of Physical Chemistry B · doi:10.1021/jp027664a · Cited by 355
Metadata
- Authors
- Derycke, V., Martel, R., Appenzeller, J., & Avouris, P.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2002-04-15
- Volume
- 80
- Issue
- 15
- Pages
- 2773-2775
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2060139435
- Cited by
- 667
- References
- 0
- FWCI
- 35.56
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Controlling doping and carrier injection in carbon nanotube transistors. https://app.cochat.ai/papers/10.1063/1.1467702
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- Derycke, V., Martel, R., Appenzeller, J., & Avouris, P. (2002). Controlling doping and carrier injection in carbon nanotube transistors. Applied Physics Letters. https://doi.org/10.1063/1.1467702
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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
