The DOI matches its Crossref record; 12 of the 12 references it cites were found in a registry or an index.
N-type organic thin-film transistor with high field-effect mobility based on a N,N′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative
Abstract
N , N ′ -dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H) thin films have been implemented into organic thin-film field-effect transistors. Mobilities up to 0.6 cm2 V−1 s−1 and current on/off ratios >105 were obtained. Linear regime mobilities were typically half of those measured in the saturation regime. X-ray studies in reflection mode suggest a spacing of ∼20 Å for thin evaporated films of PTCDI-C8H, which is consistent with the value of ∼21±2 Å obtained from our simulations when an interdigitated packing structure is assumed.
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Cited by
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Metadata
- Authors
- Malenfant, P. R. L., Dimitrakopoulos, C. D., Gelorme, J. D., Kosbar, L. L., Graham, T. O., Curioni, A., & Andreoni, W.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2002-04-08
- Volume
- 80
- Issue
- 14
- Pages
- 2517-2519
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2039078392
- Cited by
- 451
- References
- 12
- FWCI
- 26.64
- Type
- journal article
- Language
- en
- Open access
- closed
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- Malenfant, P. R. L., Dimitrakopoulos, C. D., Gelorme, J. D., Kosbar, L. L., Graham, T. O., Curioni, A., & Andreoni, W. (2002). N-type organic thin-film transistor with high field-effect mobility based on a N,N′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative. Applied Physics Letters. https://doi.org/10.1063/1.1467706
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