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Cited by 351

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Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition

Kojima, Takashi, Sakai, Tomohiro, Watanabe, Takayuki, Funakubo, Hiroshi, Saito, Keisuke, Osada, Minoru·2002·Applied Physics Letters

Abstract

(104)-oriented Bi4Ti3O12, La-substituted Bi4Ti3O12[(Bi3.44La0.56)Ti3O12] and Nd-substituted Bi4Ti3O12[(Bi3.54Nd0.46)Ti3O12] films were epitaxially grown on (111)SrRuO3//(111)SrTiO3 substrates at 700 °C by metalorganic chemical vapor deposition. All deposited films showed strong (104) orientations. The values of the remanent polarization (Pr) and coercive field (Ec) of the (104)-oriented epitaxial (Bi3.54Nd0.46)Ti3O12 thin film were 25 μC/cm2 and 135 kV/cm, respectively. This Pr value was larger than that of the (104)-oriented (Bi3.44La0.56)Ti3O12 film: Pr and Ec values of the (Bi3.44La0.56)Ti3O12 were 17 μC/cm2 and 145 kV/cm, respectively. These good ferroelectric properties of (Bi3.54Nd0.46)Ti3O12 films can be explained by a large tilting of TiO6 octahedra induced by the substitution of Nd3+, the ionic radius of which is smaller than that of La3+. Moreover, this Pr value is almost equal to that of commercially used lead zirconate titanate (PZT) films for nonvolatile ferroelectric random access memory (FeRAM) applications. These (104)-oriented epitaxial (Bi3.54Nd0.46)Ti3O12 thin films also showed a fatigue-free character. As a result, lead-free Nd-substituted Bi4Ti3O12 films with good ferroelectric properties comparable with those of PZT films are useful candidates for FeRAM applications.

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Metadata

Authors
Kojima, T., Sakai, T., Watanabe, T., Funakubo, H., Saito, K., & Osada, M.
Venue
Applied Physics Letters
Published
2002-04-15
Volume
80
Issue
15
Pages
2746-2748
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1516301772
Cited by
351
References
1
FWCI
25.74
Type
journal article
Language
en
Open access
closed

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Kojima, T., Sakai, T., Watanabe, T., Funakubo, H., Saito, K., & Osada, M. (2002). Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition. Applied Physics Letters. https://doi.org/10.1063/1.1468914

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