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Unusual properties of the fundamental band gap of InN
Open accessAbstract
The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. These three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free-electron concentration of the sample. The peak energy exhibits very weak hydrostatic pressure dependence, and a small, anomalous blueshift with increasing temperature.
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Citations
Cited by
Properties of GaN and related compounds studied by means of Raman scattering
Harima, H. (2002) · Journal of Physics: Condensed Matter · doi:10.1088/0953-8984/14/38/201 · Cited by 699
Janotti, A., Segev, D., & Van de Walle, C. G. (2006) · Physical Review B · doi:10.1103/physrevb.74.045202 · Cited by 353
Pela, R. R., Hsiao, C.-L., Hultman, L., Birch, J., & Gueorguiev, G. K. (2024) · Physical Chemistry Chemical Physics · doi:10.1039/d3cp05295h · Cited by 75
Metadata
- Authors
- Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, H., Schaff, W. J., Saito, Y., & Nanishi, Y.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2002-05-27
- Volume
- 80
- Issue
- 21
- Pages
- 3967-3969
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1995421517
- Cited by
- 1,472
- References
- 0
- FWCI
- 71.42
- Type
- journal article
- Language
- en
- Open access
- green
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- CoChat. (2026). Citation check: Unusual properties of the fundamental band gap of InN. https://app.cochat.ai/papers/10.1063/1.1482786
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- Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, H., Schaff, W. J., Saito, Y., & Nanishi, Y. (2002). Unusual properties of the fundamental band gap of InN. Applied Physics Letters. https://doi.org/10.1063/1.1482786
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