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Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers
Abstract
GaAs/Al x Ga (1−x) As quantum well lasers have been demonstrated via organometallic chemical vapor deposition on relaxed graded Ge/GexSi(1−x) virtual substrates on Si. A number of GaAs/Ge/Si integration issues including Ge autodoping behavior in GaAs, reduced critical thickness due to thermal expansion mismatch, and complications with mirror facet cleaving have been overcome. Despite unoptimized laser structures with high series resistance and large threshold current densities, surface threading dislocation densities for GaAs/AlGaAs lasers on Si substrates as low as 2×106 cm−2 permitted continuous room-temperature lasing at a wavelength of 858 nm. The laser structures are uncoated edge-emitting broad-area devices with differential quantum efficiencies of 0.24 and threshold current densities of 577 A/cm2. Identical devices grown on commercial GaAs substrates showed similar behavior. This comparative data agrees with previous measurements of near-bulk minority carrier lifetimes in GaAs grown on Ge/GeSi/Si substrates.
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Cited by
Recent progress in lasers on silicon
Liang, D., & Bowers, J. E. (2010) · Nature Photonics · doi:10.1038/nphoton.2010.167 · Cited by 1,122
On-chip silicon photonic signaling and processing: a review
Wang, J., & Long, Y. (2018) · Science Bulletin · doi:10.1016/j.scib.2018.05.038 · Cited by 206
Emerging heterogeneous integrated photonic platforms on silicon
Fathpour, S. (2014) · Nanophotonics · doi:10.1515/nanoph-2014-0024 · Cited by 74
Metadata
- Authors
- Groenert, M. E., Leitz, C. W., Pitera, A. J., Yang, V., Lee, H., Ram, R. J., & Fitzgerald, E. A.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2003-01-01
- Volume
- 93
- Issue
- 1
- Pages
- 362-367
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2078506594
- Cited by
- 277
- References
- 0
- FWCI
- 8.06
- Type
- journal article
- Language
- en
- Open access
- closed
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- Groenert, M. E., Leitz, C. W., Pitera, A. J., Yang, V., Lee, H., Ram, R. J., & Fitzgerald, E. A. (2003). Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers. Journal of Applied Physics. https://doi.org/10.1063/1.1525865
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