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Cited by 454

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Nanowire resonant tunneling diodes

Björk, M. T., Ohlsson, B. J., Thelander, C., Persson, A. I., Deppert, K., Wallenberg, L. R., Samuelson, L.·2002·Applied Physics Letters

Abstract

Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/μm2 was observed at low temperatures.

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Metadata

Authors
Björk, M. T., Ohlsson, B. J., Thelander, C., Persson, A. I., Deppert, K., Wallenberg, L. R., & Samuelson, L.
Venue
Applied Physics Letters
Published
2002-12-02
Volume
81
Issue
23
Pages
4458-4460
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1965116085
Cited by
454
References
1
FWCI
23.86
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Nanowire resonant tunneling diodes. https://app.cochat.ai/papers/10.1063/1.1527995
The paper
Björk, M. T., Ohlsson, B. J., Thelander, C., Persson, A. I., Deppert, K., Wallenberg, L. R., & Samuelson, L. (2002). Nanowire resonant tunneling diodes. Applied Physics Letters. https://doi.org/10.1063/1.1527995

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.