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Transparent thin film transistors using ZnO as an active channel layer and their electrical properties
Abstract
Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO–TFT) have been constructed. The ZnO layers were deposited using pulsed laser deposition at 450 °C at an oxygen pressure of 3 m Torr, and the material that was formed had a background carrier concentration of less than 5×1016 cm−3. A double layer gate insulator consisting of SiO2 and SiNx was effective in suppressing leakage current and enabling the ZnO–TFT to operate successfully. The Ion/Ioff ratio of ZnO–TFTs fabricated on Si wafers was more than 105 and the optical transmittance of ZnO–TFTs fabricated on glass was more than 80%. These results show that it is possible to fabricate a transparent TFT that can even be operated in the presence of visible light.
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Citations
Cited by
Transient, Biocompatible Electronics and Energy Harvesters Based on ZnO
Dagdeviren, C., Hwang, S., Su, Y., Kim, S., Cheng, H., Gur, O., Haney, R., Omenetto, F. G., Huang, Y., & Rogers, J. A. (2013) · Small · doi:10.1002/smll.201300146 · Cited by 412
Metadata
- Authors
- Masuda, S., Kitamura, K., Okumura, Y., Miyatake, S., Tabata, H., & Kawai, T.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2003-02-01
- Volume
- 93
- Issue
- 3
- Pages
- 1624-1630
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2046791610
- Cited by
- 534
- References
- 0
- FWCI
- 30.50
- Type
- journal article
- Language
- en
- Open access
- closed
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- Masuda, S., Kitamura, K., Okumura, Y., Miyatake, S., Tabata, H., & Kawai, T. (2003). Transparent thin film transistors using ZnO as an active channel layer and their electrical properties. Journal of Applied Physics. https://doi.org/10.1063/1.1534627
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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