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Mechanism for thermoelectric figure-of-merit enhancement in regimented quantum dot superlattices
Abstract
We propose a mechanism for enhancement of the thermoelectric figure-of-merit in regimented quantum dot superlattices. A proof-of-concept calculation has been carried out for p-type regimented superlattice of Ge dots on Si. It is shown that when conditions for miniband formations are satisfied, carrier transport in such structures can be tuned in a favorable way leading to large carrier mobility, Seebeck coefficient, and, as a result, to the thermoelectric figure-of-merit enhancement. To maximize the improvement, one has to tune the parameters of quantum dot superlattice in such a way that electrical current is mostly through the well-separated minibands of relatively large width (at least several kBT, where kB is Boltzmann’s constant and T is temperature).
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Cites
Balandin, A., & Wang, K. L. (1998) · Physical Review B · doi:10.1103/physrevb.58.1544 · Cited by 647
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Cited by
Androulakis, J., Lin, C.-H., Kong, H.-J., Uher, C., Wu, C.-I., Hogan, T., Cook, B. A., Caillat, T., Paraskevopoulos, K. M., & Kanatzidis, M. G. (2007) · Journal of the American Chemical Society · doi:10.1021/ja071875h · Cited by 441
Metadata
- Authors
- Balandin, A. A., & Lazarenkova, O. L.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2003-01-20
- Volume
- 82
- Issue
- 3
- Pages
- 415-417
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2028517799
- Cited by
- 168
- References
- 1
- FWCI
- 4.87
- Type
- journal article
- Language
- en
- Open access
- closed
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- Balandin, A. A., & Lazarenkova, O. L. (2003). Mechanism for thermoelectric figure-of-merit enhancement in regimented quantum dot superlattices. Applied Physics Letters. https://doi.org/10.1063/1.1539905
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