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Increased mobility from regioregular poly(3-hexylthiophene) field-effect transistors
Abstract
Relatively high mobilities, μ=0.2 cm2 V−1 s−1 in the accumulation mode and μ=0.17 cm2 V−1 s−1 in the depletion mode, are reported for regioregular poly(3-hexylthiophene) (RR-P3HT) in field-effect transistors (FETs). Significantly higher mobility is obtained from FETs in which the RR-P3HT film is applied by dip-coating to a thickness of only 20−40 Å. These observations suggest that structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate insulator is of paramount importance for achieving high carrier mobility. Heat treatment under nitrogen at 160 °C for 3 min increases the on/off ratio of the FET.
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Cited by
Efficient, stable and scalable perovskite solar cells using poly(3-hexylthiophene)
Jung, E. H., Jeon, N. J., Park, E. Y., Moon, C. S., Shin, T. J., Yang, T.-Y., Noh, J. H., & Seo, J. (2019) · Nature · doi:10.1038/s41586-019-1036-3 · Cited by 2,305
Gate Insulators in Organic Field-Effect Transistors
Veres, J., Ogier, S., Lloyd, G., & de Leeuw, D. (2004) · Chemistry of Materials · doi:10.1021/cm049598q · Cited by 893
High-k Organic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors
Ortiz, R. P., Facchetti, A., & Marks, T. J. (2010) · Chemical Reviews · doi:10.1021/cr9001275 · Cited by 871
Organic thin film transistors: From theory to real devices
Horowitz, G. (2004) · Journal of Materials Research · doi:10.1557/jmr.2004.0266 · Cited by 852
Dang, M. T., Hirsch, L., Wantz, G., & Wuest, J. D. (2013) · Chemical Reviews · doi:10.1021/cr300005u · Cited by 587
Metadata
- Authors
- Wang, G., Swensen, J., Moses, D., & Heeger, A. J.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2003-05-15
- Volume
- 93
- Issue
- 10
- Pages
- 6137-6141
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2084976638
- Cited by
- 418
- References
- 0
- FWCI
- 30.50
- Type
- journal article
- Language
- en
- Open access
- closed
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- Wang, G., Swensen, J., Moses, D., & Heeger, A. J. (2003). Increased mobility from regioregular poly(3-hexylthiophene) field-effect transistors. Journal of Applied Physics. https://doi.org/10.1063/1.1568526
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