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Cited by 355

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Schottky nanocontacts on ZnO nanorod arrays

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Park, W. I., Yi, Gyu-Chul, Kim, J.-W., Park, S.-M.·2003·Applied Physics Letters

Abstract

We report on fabrication and electrical characteristics of ZnO nanorod Schottky diode arrays. High quality ZnO nanorods were grown for the fabrication of the Schottky diodes using noncatalytic metalorganic vapor phase epitaxy and Au was evaporated on the tips of the vertically well-aligned ZnO nanorods. I–V characteristics of both bare ZnO and Au/ZnO heterostructure nanorod arrays were measured using current-sensing atomic force microscopy. Although both nanorods exhibited nonlinear and asymmetric I–V characteristic curves, Au/ZnO heterostructure nanorods demonstrated much improved electrical characteristics: the reverse-bias breakdown voltage was improved from −3 to −8 V by capping a Au layer on the nanorod tips. The origin of the enhanced electrical characteristics for the heterostructure nanorods is suggested.

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Metadata

Authors
Park, W. I., Yi, G.-C., Kim, J.-W., & Park, S.-M.
Venue
Applied Physics Letters
Published
2003-06-16
Volume
82
Issue
24
Pages
4358-4360
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2072633248
Cited by
355
References
1
FWCI
15.26
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Schottky nanocontacts on ZnO nanorod arrays. https://app.cochat.ai/papers/10.1063/1.1584089
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Park, W. I., Yi, G.-C., Kim, J.-W., & Park, S.-M. (2003). Schottky nanocontacts on ZnO nanorod arrays. Applied Physics Letters. https://doi.org/10.1063/1.1584089

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