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Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes
Abstract
Diode ideality factors much higher than the expected values of 1.0 to 2.0 have been reported in GaN-based p-n junctions. It is shown that moderately doped unipolar heterojunctions as well as metal-semiconductor junctions, in particular the metal contact to p-type GaN, can increase the ideality factor to values greater than 2.0. A relation is derived for the effective ideality factor by taking into account all junctions of the diode structure. Diodes fabricated from a bulk GaN p-n junction and a p-n junction structure with a p-type AlGaN/GaN superlattice display ideality factors of 6.9 and 4.0, respectively. These results are consistent with the theoretical model and the fact that p-type AlGaN/GaN superlattices facilitate the formation of low-resistance ohmic contacts.
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Cited by
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Dong, Y., Tian, B., Kempa, T. J., & Lieber, C. M. (2009) · Nano Letters · doi:10.1021/nl900858v · Cited by 386
Midwavelength Infrared p–n Heterojunction Diodes Based on Intraband Colloidal Quantum Dots
Hafiz, S. B., Al Mahfuz, M. M., Lee, S., & Ko, D.-K. (2021) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.1c14749 · Cited by 29
Metadata
- Authors
- Shah, J. M., Li, Y.-L., Gessmann, T., & Schubert, E. F.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2003-08-15
- Volume
- 94
- Issue
- 4
- Pages
- 2627-2630
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2048388556
- Cited by
- 464
- References
- 0
- FWCI
- 7.33
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes. https://app.cochat.ai/papers/10.1063/1.1593218
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- Shah, J. M., Li, Y.-L., Gessmann, T., & Schubert, E. F. (2003). Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes. Journal of Applied Physics. https://doi.org/10.1063/1.1593218
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