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Mechanism for bistability in organic memory elements
Abstract
We demonstrate that the resistive switching phenomenon observed in organic semiconductor layers containing granular metal particles conforms to a charge storage mechanism described by Simmons and Verderber [Proc. R. Soc. A 391, 77 (1967)]. The space-charge field due to the stored charge inhibits further charge injection from the electrodes. The equilibrium current–voltage curve is N shaped and the low and high resistance states are obtained by applying voltage close to the local maximum and minimum, respectively.
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Citations
Cited by
Polyaniline Nanofiber/Gold Nanoparticle Nonvolatile Memory
Tseng, R. J., Huang, J., Ouyang, J., Kaner, R. B., & Yang (2005) · Nano Letters · doi:10.1021/nl050587l · Cited by 835
Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices
Yang, Y., Ouyang, J., Ma, L., Tseng, R. J. ‐., & Chu, C. ‐. (2006) · Advanced Functional Materials · doi:10.1002/adfm.200500429 · Cited by 580
Chiolerio, A., Roppolo, I., Bejtka, K., Asvarov, A., & Pirri, C. F. (2016) · RSC Advances · doi:10.1039/c6ra10503c · Cited by 57
Metadata
- Authors
- Bozano, L. D., Kean, B. W., Deline, V. R., Salem, J. R., & Scott, J. C.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2004-01-26
- Volume
- 84
- Issue
- 4
- Pages
- 607-609
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2075560254
- Cited by
- 409
- References
- 0
- FWCI
- 27.47
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Mechanism for bistability in organic memory elements. https://app.cochat.ai/papers/10.1063/1.1643547
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- Bozano, L. D., Kean, B. W., Deline, V. R., Salem, J. R., & Scott, J. C. (2004). Mechanism for bistability in organic memory elements. Applied Physics Letters. https://doi.org/10.1063/1.1643547
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