The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Multilevel memory based on molecular devices
Abstract
Multilevel molecular memory devices were proposed and demonstrated for nonvolatile data storage up to three bits (eight levels) per cell, in contrast to the standard one-bit-per-cell (two levels) technology. In the demonstration, charges were precisely placed at up to eight discrete levels in redox active molecules self-assembled on single-crystal semiconducting nanowire field-effect transistors. Gate voltage pulses and current sensing were used for writing and reading operations, respectively. Charge storage stability was tested up to retention of 600 h, as compared to the longest retention of a few hours previously reported for one-bit-per-cell molecular memories.
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Citations
Cites
Nonvolatile Memory and Programmable Logic from Molecule-Gated Nanowires
Duan, X., Huang, Y., & Lieber, C. M. (2002) · Nano Letters · doi:10.1021/nl025532n · Cited by 346
Metadata
- Authors
- Li, C., Fan, W., Lei, B., Zhang, D., Han, S., Tang, T., Liu, X., Liu, Z., Asano, S., Meyyappan, M., Han, J., & Zhou, C.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2004-03-15
- Volume
- 84
- Issue
- 11
- Pages
- 1949-1951
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2002904961
- Cited by
- 162
- References
- 1
- FWCI
- 14.71
- Type
- journal article
- Language
- en
- Open access
- closed
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- Li, C., Fan, W., Lei, B., Zhang, D., Han, S., Tang, T., Liu, X., Liu, Z., Asano, S., Meyyappan, M., Han, J., & Zhou, C. (2004). Multilevel memory based on molecular devices. Applied Physics Letters. https://doi.org/10.1063/1.1667615
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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