Thermal Conductivity of GaAs and GaAs1− x P x Laser Semiconductors
Abstract
Measurements of thermal conductivity for the range 3° to 300°K are reported for both pure and heavily doped n- and p-type GaAs single crystals, and n-type heavily doped polycrystalline GaAs1−xPx crystals with six compositions between x=0 and x=0.5. The alloy ingots have much lower K values due to alloy scattering, with a composition of 35% phosphide content (near the limit of laser operation) having a K less than 1/20 that of pure GaAs at 77°K. Hence heat dissipation is a serious obstacle to continuous operation of alloy lasers.
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The bulk thermal conductivity of GaAs at T = 300 K is 50 W/mK.
“The bulk thermal conductivities of GaAs, GaN, AlN, and SiC (4H and 6H) at T = 300 K are 501213, 2301415, 28516, and 490 Wm−1K−11718, respectively.”
From Universal phonon mean free path spectra in crystalline semiconductors at high temperature (2013) · cites this paper as [12]
This suppression is expected when LP is shorter than the MFPs of some phonons.
“This suppression is expected when LP is shorter than the MFPs of some phonons12.”
From Universal phonon mean free path spectra in crystalline semiconductors at high temperature (2013) · cites this paper as [12]
BB-FDTR and TDTR measurements have demonstrated that a constant value of thermal conductivity over the range of measured heating frequencies (0.2 ≤ f1 ≤ 200 MHz) accurately identifies the expected bulk values of SiO2 and platinum samples with little deviation between measured data and analytical fits.
“BB-FDTR and TDTR measurements have demonstrated that a constant value of thermal conductivity over the range of measured heating frequencies (0.2 ≤ f1 ≤ 200 MHz) accurately identifies the expected bulk values of SiO2 and platinum samples with little deviation between the measured data and analytical fits12.”
From Universal phonon mean free path spectra in crystalline semiconductors at high temperature (2013) · cites this paper as [12]
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Universal phonon mean free path spectra in crystalline semiconductors at high temperature
Freedman, J. P., Leach, J. H., Preble, E. A., Sitar, Z., Davis, R. F., & Malen, J. A. (2013) · Scientific Reports · doi:10.1038/srep02963 · Cited by 171 · see citing works
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- Authors
- Carlson, R. O., Slack, G. A., & Silverman, S. J.
- Affiliations
- General Electric (United States) (US)
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 1965-02-01
- Volume
- 36
- Issue
- 2
- Pages
- 505-507
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1965178750
- Cited by
- 166
- References
- 0
- Citations by year
- 2026: 5 · 2025: 7 · 2024: 11 · 2023: 6 · 2022: 3 · 2021: 5 · 2020: 6 · 2019: 9 · 2018: 8 · 2017: 6 · 2016: 7 · 2015: 2 · 2014: 4 · 2013: 8 · 2012: 5
- FWCI
- 8.91
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of Applied Physics (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
- Physical Sciences › Materials Science › Materials Chemistry › Advanced Thermoelectric Materials and Devices
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Semiconductor materials and interfaces
- Keywords
- thermal conductivity, GaAs, GaAsP alloys, semiconductor lasers, heat dissipation, alloy scattering, degenerate semiconductors, low-temperature thermal transport
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