The DOI matches its Crossref record.
TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
Abstract
Expressions for the temperature dependence of the carrier mean free path for optical phonon scattering and the mean energy loss per collision are presented which predict avalanche multiplication as a function of electric field for any operating temperature once the appropriate parameters have been determined at a single temperature. This has been verified for electrons in Si by the correlation of measurements at 300°K, 213°K, and 100°K. The temperature dependence of the breakdown voltages of a variety of abrupt and linear-graded Si and Ge p-n junctions has also been predicted. The fractional change in breakdown voltage with increasing temperature is predicted to decrease with increased doping concentration and, for the same breakdown voltage, to be less for linear-graded junctions than for abrupt junctions.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cited by
SiC devices: physics and numerical simulation
Ruff, M., Mitlehner, H., & Helbig, R. (1994) · IEEE Transactions on Electron Devices · doi:10.1109/16.293319 · Cited by 508
A single-transistor silicon synapse
Diorio, C., Hasler, P., Minch, A., & Mead, C. A. (1996) · IEEE Transactions on Electron Devices · doi:10.1109/16.543035 · Cited by 360
Metadata
- Authors
- Crowell, C. R., & Sze, S. M.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1966-09-15
- Volume
- 9
- Issue
- 6
- Pages
- 242-244
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2068111547
- Cited by
- 458
- References
- 0
- FWCI
- 8.27
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS. https://app.cochat.ai/papers/10.1063/1.1754731
- The paper
- Crowell, C. R., & Sze, S. M. (1966). TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS. Applied Physics Letters. https://doi.org/10.1063/1.1754731
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
