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Femtosecond laser-induced formation of submicrometer spikes on silicon in water
Abstract
We fabricate submicrometer silicon spikes by irradiating a silicon surface that is submerged in water with 400 nm, 100 fs laser pulses. These spikes are less than a micrometer tall and about 200 nm wide—one to two orders of magnitude smaller than the microspikes formed by laser irradiation of silicon in gases or vacuum. Scanning electron micrographs of the surface show that the formation of the spikes involves a combination of capillary waves on the molten silicon surface and laser-induced etching of silicon. Chemical analysis and scanning electron microscopy of the spikes show that they are composed of silicon with a 20-nm-thick surface oxide layer.
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Citations
Cited by
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Yang, G. W. (2007) · Progress in Materials Science · doi:10.1016/j.pmatsci.2006.10.016 · Cited by 1,055
Black silicon: fabrication methods, properties and solar energy applications
Liu, X., Coxon, P. R., Peters, M., Hoex, B., Cole, J. M., & Fray, D. J. (2014) · Energy Environ. Sci. · doi:10.1039/c4ee01152j · Cited by 511
Microstructured silicon photodetector
Huang, Z., Carey, J. E., Liu, M., Guo, X., Mazur, E., & Campbell, J. C. (2006) · Applied Physics Letters · doi:10.1063/1.2227629 · Cited by 317
Self-citationEnhancement of pulsed laser ablation in environmentally friendly liquid
Luo, F., Guan, Y., Ong, W., Du, Z., Ho, G., Li, F., Sun, S., Lim, G., & Hong, M. (2014) · Optics Express · doi:10.1364/oe.22.023875 · Cited by 24
Metadata
- Authors
- Shen, M. Y., Crouch, C. H., Carey, J. E., & Mazur, E.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2004-12-06
- Volume
- 85
- Issue
- 23
- Pages
- 5694-5696
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1994986592
- Cited by
- 261
- References
- 0
- FWCI
- 8.38
- Type
- journal article
- Language
- en
- Open access
- closed
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- Shen, M. Y., Crouch, C. H., Carey, J. E., & Mazur, E. (2004). Femtosecond laser-induced formation of submicrometer spikes on silicon in water. Applied Physics Letters. https://doi.org/10.1063/1.1828575
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