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Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices
Open accessAbstract
An abrupt first-order metal-insulator transition (MIT) as a current jump has been observed by applying a dc electric field to Mott insulator VO2-based two-terminal devices. The size of the jumps was measured to be asymmetrical depending on the direction of the applied voltage due to heating effects. The structure of VO2 is investigated by micro-Raman scattering experiments. An analysis of the Raman-active Ag modes at 195 and 222cm−1, explained by pairing and tilting of V cations, and 622cm−1, shows that the modes below a low compliance (restricted) current do not change when the MIT occurs, whereas a structural phase transition above the low compliance current is found to occur secondarily, due to heating effects in the device induced by the MIT. The MIT has applications in the development of high-speed and high-gain switching devices.
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Cited by
Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag2S Nanoscale Ionic Conductor
Xu, Z., Bando, Y., Wang, W., Bai, X., & Golberg, D. (2010) · ACS Nano · doi:10.1021/nn100483a · Cited by 266
Metadata
- Authors
- Kim, H.-T., Chae, B.-G., Youn, D.-H., Kim, G., Kang, K.-Y., Lee, S.-J., Kim, K., & Lim, Y.-S.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2005-06-06
- Volume
- 86
- Issue
- 24
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2281248403
- Cited by
- 248
- References
- 0
- FWCI
- 12.39
- Type
- journal article
- Language
- en
- Open access
- green
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- Kim, H.-T., Chae, B.-G., Youn, D.-H., Kim, G., Kang, K.-Y., Lee, S.-J., Kim, K., & Lim, Y.-S. (2005). Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices. Applied Physics Letters. https://doi.org/10.1063/1.1941478
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