The DOI matches its Crossref record; 16 of the 16 references it cites were found in a registry or an index.
GaN nanowire lasers with low lasing thresholds
Abstract
We report optically pumped room-temperature lasing in GaN nanowires grown by metalorganic chemical vapor deposition (MOCVD). Electron microscopy images reveal that the nanowires grow along a nonpolar ⟨11-20⟩ direction, have single-crystal structures and triangular cross sections. The nanowires function as free-standing Fabry–Pérot cavities with cavity mode spacings that depend inversely on length. Optical excitation studies demonstrate thresholds for stimulated emission of 22kW∕cm2 that are substantially lower than other previously reported GaN nanowires. Key contributions to low threshold lasing in these MOCVD GaN nanowire cavities and the development of electrically pumped GaN nanowire lasers are discussed.
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Cites
Room-Temperature Ultraviolet Nanowire Nanolasers
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Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
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Self-citationGrowth of nanowire superlattice structures for nanoscale photonics and electronics
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Self-citationSingle-nanowire electrically driven lasers
Duan, X., Huang, Y., Agarwal, R., & Lieber, C. M. (2003) · Nature · doi:10.1038/nature01353 · Cited by 2,447
Self-citationSvelto, O. (2010) · Springer eBooks · doi:10.1007/978-1-4419-1302-9 · Cited by 1,978
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
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Highly Polarized Photoluminescence and Photodetection from Single Indium Phosphide Nanowires
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Self-citationSingle gallium nitride nanowire lasers
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Self-citationNanowires for Integrated Multicolor Nanophotonics
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Cited by
Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers
Qian, F., Li, Y., Gradečak, S., Park, H.-G., Dong, Y., Ding, Y., Wang, Z. L., & Lieber, C. M. (2008) · Nature Materials · doi:10.1038/nmat2253 · Cited by 733
Self-citationGuilhabert, B., Hurtado, A., Jevtics, D., Gao, Q., Tan, H. H., Jagadish, C., & Dawson, M. D. (2016) · ACS Nano · doi:10.1021/acsnano.5b07752 · Cited by 61
Damilano, B., Coulon, P.-M., Vézian, S., Brändli, V., Duboz, J.-Y., Massies, J., & Shields, P. A. (2019) · Applied Physics Express · doi:10.7567/1882-0786/ab0d32 · Cited by 24
Metadata
- Authors
- Gradečak, S., Qian, F., Li, Y., Park, H.-G., & Lieber, C. M.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2005-10-18
- Volume
- 87
- Issue
- 17
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1980656453
- Cited by
- 469
- References
- 16
- FWCI
- 21.72
- Type
- journal article
- Language
- en
- Open access
- closed
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- Gradečak, S., Qian, F., Li, Y., Park, H.-G., & Lieber, C. M. (2005). GaN nanowire lasers with low lasing thresholds. Applied Physics Letters. https://doi.org/10.1063/1.2115087
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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