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Deep-level emissions influenced by O and Zn implantations in ZnO
Abstract
A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1×1017∕cm3 and 5×1019∕cm3. The samples were thermally treated in an oxygen gas environment after the implantation. The results clearly show the influence of O and Zn implantations on the deep-level emission. By comparing the photoluminescence spectra for the samples with different implantations, we can conclude that the VZn is responsible to the observed deep-level emission. In addition, a novel transition at the emission energy of 3.08eV at 77K appears in the O-implanted sample with 5×1019∕cm3 implantation concentration. The novel emission is tentatively identified as O-antisite OZn.
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Cites
Self-interaction correction to density-functional approximations for many-electron systems
Perdew, J. P., & Zunger, A. (1981) · Physical Review B · doi:10.1103/physrevb.23.5048 · Cited by 20,887
Cited by
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Djurišić, A. B., Ng, A. M. C., & Chen, X. Y. (2010) · Progress in Quantum Electronics · doi:10.1016/j.pquantelec.2010.04.001 · Cited by 1,078
Ag/ZnO Heterostructure Nanocrystals: Synthesis, Characterization, and Photocatalysis
Zheng, Y., Zheng, L., Zhan, Y., Lin, X., Zheng, Q., & Wei, K. (2007) · Inorganic Chemistry · doi:10.1021/ic700688f · Cited by 913
Willander, M., Nur, O., Zhao, Q. X., Yang, L. L., Lorenz, M., Cao, B. Q., Zúñiga Pérez, J., Czekalla, C., Zimmermann, G., Grundmann, M., et al. (2009) · Nanotechnology · doi:10.1088/0957-4484/20/33/332001 · Cited by 631
Self-citationZheng, Y., Chen, C., Zhan, Y., Lin, X., Zheng, Q., Wei, K., Zhu, J., & Zhu, Y. (2007) · Inorganic Chemistry · doi:10.1021/ic062394m · Cited by 558
Photoluminescence of ZnO Nanowires: A Review
Galdámez-Martinez, A., Santana, G., Güell, F., Martínez-Alanis, P. R., & Dutt, A. (2020) · Nanomaterials · doi:10.3390/nano10050857 · Cited by 425
Metadata
- Authors
- Zhao, Q. X., Klason, P., Willander, M., Zhong, H. M., Lu, W., & Yang, J. H.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2005-11-17
- Volume
- 87
- Issue
- 21
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1970085422
- Cited by
- 294
- References
- 1
- FWCI
- 6.85
- Type
- journal article
- Language
- en
- Open access
- closed
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- Zhao, Q. X., Klason, P., Willander, M., Zhong, H. M., Lu, W., & Yang, J. H. (2005). Deep-level emissions influenced by O and Zn implantations in ZnO. Applied Physics Letters. https://doi.org/10.1063/1.2135880
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