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Light emission from an ambipolar semiconducting polymer field-effect transistor
Abstract
Ambipolar light-emitting field-effect transistors are fabricated with two different metals for the top-contact source and drain electrodes; a low-work-function metal defining the channel for the source electrode and a high-work-function metal defining the channel for the drain electrode. A thin film of polypropylene-co-1-butene on SiNx is used as the gate dielectric on an n++-Si wafer, which functioned as the substrate and the gate electrode. Transport data show ambipolar behavior. Recombination of electrons and holes results in a narrow zone of light emission within the channel. The location of the emission zone is controlled by the gate bias.
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Citations
Cited by
π-Conjugated Polymers for Organic Electronics and Photovoltaic Cell Applications
Facchetti, A. (2011) · Chemistry of Materials · doi:10.1021/cm102419z · Cited by 2,348
Lead iodide perovskite light-emitting field-effect transistor
Chin, X. Y., Cortecchia, D., Yin, J., Bruno, A., & Soci, C. (2015) · Nature Communications · doi:10.1038/ncomms8383 · Cited by 767
Self-citationFunctional Organic Field‐Effect Transistors
Guo, Y., Yu, G., & Liu, Y. (2010) · Advanced Materials · doi:10.1002/adma.201000740 · Cited by 585
Mas-Torrent, M., & Rovira, C. (2008) · Chemical Society Reviews · doi:10.1039/b614393h · Cited by 469
Zhang, Y., Wang, Y., Gao, C., Ni, Z., Zhang, X., Hu, W., & Dong, H. (2023) · Chemical Society Reviews · doi:10.1039/d2cs00720g · Cited by 293
Metadata
- Authors
- Swensen, J. S., Soci, C., & Heeger, A. J.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2005-12-15
- Volume
- 87
- Issue
- 25
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2060183276
- Cited by
- 231
- References
- 0
- FWCI
- 20.02
- Type
- journal article
- Language
- en
- Open access
- closed
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- Swensen, J. S., Soci, C., & Heeger, A. J. (2005). Light emission from an ambipolar semiconducting polymer field-effect transistor. Applied Physics Letters. https://doi.org/10.1063/1.2149986
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