The DOI matches its Crossref record; 30 of the 30 references it cites were found in a registry or an index.
Spin-transfer switching in MgO-based magnetic tunnel junctions (invited)
Open accessAbstract
We present spin-transfer switching results for MgO-based magnetic tunneling junctions (MTJs) with large tunneling magnetoresistance ratio of up to 150% and low intrinsic switching current density (Jc0) of (2–3)×106A∕cm2. The low intrinsic switching current density is attributed to high tunneling spin polarization (TSP) in MgO-based MTJs. The current switching data are discussed based on a qualitative study of TSP in MgO-based MTJs. Additional film stack modification needed to decrease the switching current to meet the requirement of advanced magnetoresistive random access memory application is also discussed.
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“From a circuit-theoretic perspective, the non-volatile resistance switching memory device reported in [7] bears the fingerprint of a memristor, and should be modeled as a memristor.”
From Resistance switching memories are memristors (2011) · cites this paper as [7]
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“For example, we have shown that spin-transfer magnetic tunnel junctions are examples of memristors.”
From Resistance switching memories are memristors (2011) · cites this paper as [7]
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Citations
Cites
Current-driven excitation of magnetic multilayers
Slonczewski, J. C. (1996) · Journal of Magnetism and Magnetic Materials · doi:10.1016/0304-8853(96)00062-5 · Cited by 6,827
Emission of spin waves by a magnetic multilayer traversed by a current
Berger, L. (1996) · Physical review. B, Condensed matter · doi:10.1103/physrevb.54.9353 · Cited by 4,915
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
Yuasa, S., Nagahama, T., Fukushima, A., Suzuki, Y., & Ando, K. (2004) · Nature Materials · doi:10.1038/nmat1257 · Cited by 3,340
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Parkin, S., Kaiser, C., Panchula, A. F., Rice, P. M., Hughes, B. P., Samant, M. G., & Yang, S. (2004) · Nature Materials · doi:10.1038/nmat1256 · Cited by 3,327
Self-citationSpin-dependent tunneling conductance of Fe|MgO|Fe sandwiches
Butler, W. H., Zhang, X.-G., Schulthess, T. C., & MacLaren, J. M. (2001) · Physical review. B, Condensed matter · doi:10.1103/physrevb.63.054416 · Cited by 2,170
Microwave oscillations of a nanomagnet driven by a spin-polarized current
Kiselev, S. I., Sankey, J. C., Krivorotov, I. N., Emley, N. C., Schoelkopf, R. J., Buhrman, R. A., & Ralph, D. C. (2003) · Nature · doi:10.1038/nature01967 · Cited by 2,019
Spin-current interaction with a monodomain magnetic body: A model study
Sun, J. (2000) · Physical review. B, Condensed matter · doi:10.1103/physrevb.62.570 · Cited by 1,068
230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctions
Djayaprawira, D. D., Tsunekawa, K., Nagai, M., Maehara, H., Yamagata, S., Watanabe, N., Yuasa, S., Suzuki, Y., & Ando, K. (2005) · Applied Physics Letters · doi:10.1063/1.1871344 · Cited by 970
Huai, Y., Albert, F., Nguyen, P. P., Pakala, M., & Valet, T. (2004) · Applied Physics Letters · doi:10.1063/1.1707228 · Cited by 582
Self-citationTime-Resolved Reversal of Spin-Transfer Switching in a Nanomagnet
Koch, R. H., Katine, J. A., & Sun, J. (2004) · Physical Review Letters · doi:10.1103/physrevlett.92.088302 · Cited by 520
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Research works printed but not linked: 1
- 2005, IEEE Trans. Magn., 41, 2641
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Sorted by citations
Resistance switching memories are memristors
Chua, L. (2011) · Applied Physics A · doi:10.1007/s00339-011-6264-9 · Cited by 1,434
Basic principles of STT-MRAM cell operation in memory arrays
Khvalkovskiy, A. V., Apalkov, D., Watts, S. M., Chepulskii, R. V., Beach, R. S., Ong, A., Tang, X., Driskill-Smith, A., Butler, W. H., Visscher, P. B., et al. (2013) · Journal of Physics D Applied Physics · doi:10.1088/0022-3727/46/7/074001 · Cited by 559
Self-citationDiao, Z., Li, Z., Wang, S., Ding, Y., Panchula, A. F., Chen, E., Wang, L.-C., & Huai, Y. (2007) · Journal of Physics Condensed Matter · doi:10.1088/0953-8984/19/16/165209 · Cited by 459
Self-citationNakayama, M., Kai, T., Shimomura, N., Amano, M., Kitagawa, E., Nagase, T., Yoshikawa, M., Kishi, T., Ikegawa, S., & Yoda, H. (2008) · Journal of Applied Physics · doi:10.1063/1.2838335 · Cited by 307
Recent Developments in Perpendicular Magnetic Anisotropy Thin Films for Data Storage Applications
Tudu, B., & Tiwari, A. (2017) · Vacuum · doi:10.1016/j.vacuum.2017.01.031 · Cited by 213
Metadata
- Authors
- Diao, Z., Pakala, M., Panchula, A., Ding, Y., Apalkov, D., Wang, L.-C., Chen, E., & Huai, Y.
- Affiliations
- Grandis Inc. , 1123 Cadillac Court, Milpitas, California 95035
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2006-04-15
- Volume
- 99
- Issue
- 8
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W2610638357
- Cited by
- 51
- References
- 30
- Citations by year
- 2026: 1 · 2024: 1 · 2021: 3 · 2019: 1 · 2018: 2 · 2017: 2 · 2016: 2 · 2015: 3 · 2014: 3 · 2013: 6 · 2012: 6
- FWCI
- 1.94
- Type
- journal article
- Language
- en
- Open access
- green
- arxiv.org
- Locations
- Journal of Applied Physics (publishedVersion)
- arXiv (Cornell University) (submittedVersion)
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Magnetic properties of thin films
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › Quantum and electron transport phenomena
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Magnetic Properties of Alloys
- Keywords
- spin-transfer switching, tunnel magnetoresistance, magnetoresistive random access memory
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