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High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
Open accessAbstract
Room temperature electron mobility of 1170cm2∕Vs is obtained in an undoped, lattice-matched, Al0.82In0.18N∕GaN field-effect transistor heterostructure, while keeping a high (2.6±0.3)×1013cm−2 electron gas density intrinsic to the Al0.82In0.18N∕GaN material system. This results in a two-dimensional sheet resistance of 210Ω∕◻. The high mobility of these layers, grown by metal-organic vapor phase epitaxy on sapphire substrate, is obtained thanks to the insertion of an optimized AlN interlayer, reducing the alloy related interface roughness scattering.
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Cited by
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Dumcenco, D., Ovchinnikov, D., Marinov, K., Lazić, P., Gibertini, M., Marzari, N., Sanchez, O. L., Kung, Y.-C., Krasnozhon, D., Chen, M.-W., et al. (2015) · ACS Nano · doi:10.1021/acsnano.5b01281 · Cited by 888
The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs
Wang, X.-D., Hu, W.-D., Chen, X.-S., & Lu, W. (2012) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2012.2188634 · Cited by 210
InAlGaN/GaN HEMTs at Cryogenic Temperatures
Dogmus, E., Kabouche, R., Lepilliet, S., Linge, A., Zegaoui, M., Ben-Ammar, H., Chauvat, M.-P., Ruterana, P., Gamarra, P., Lacam, C., et al. (2016) · Electronics · doi:10.3390/electronics5020031 · Cited by 37
Metadata
- Authors
- Gonschorek, M., Carlin, J.-F., Feltin, E., Py, M. A., & Grandjean, N.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2006-08-07
- Volume
- 89
- Issue
- 6
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2058717737
- Cited by
- 319
- References
- 0
- FWCI
- 15.61
- Type
- journal article
- Language
- en
- Open access
- green
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- Gonschorek, M., Carlin, J.-F., Feltin, E., Py, M. A., & Grandjean, N. (2006). High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures. Applied Physics Letters. https://doi.org/10.1063/1.2335390
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