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Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures

Dong, R., Lee, D. S., Xiang, W. F., Oh, S. J., Seong, D. J., Heo, S. H., Choi, H. J., Kwon, M. J., Seo, S. N., Pyun, M. B., Hasan, M., Hwang, Hyunsang·2007·Applied Physics Letters

Abstract

Materials showing reversible resistance switching between high-resistance state and low-resistance state at room temperature are attractive for today’s semiconductor technology. In this letter, the reproducible hysteresis and resistive switching characteristics of metal-CuxO-metal (M-CuxO-M) heterostructures driven by low voltages are demonstrated. The fabrication of the M-CuxO-M heterostructures is fully compatible with the standard complementary metal-oxide semiconductor process. The hysteresis and resistive switching behavior are discussed. The good retention characteristics are exhibited in the M-CuxO-M heterostructures by the accurate controlling of the preparation parameters.

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Metadata

Authors
Dong, R., Lee, D. S., Xiang, W. F., Oh, S. J., Seong, D. J., Heo, S. H., Choi, H. J., Kwon, M. J., Seo, S. N., Pyun, M. B., Hasan, M., & Hwang, H.
Venue
Applied Physics Letters
Published
2007-01-22
Volume
90
Issue
4
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1978967805
Cited by
185
References
0
FWCI
21.11
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures. https://app.cochat.ai/papers/10.1063/1.2436720
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Dong, R., Lee, D. S., Xiang, W. F., Oh, S. J., Seong, D. J., Heo, S. H., Choi, H. J., Kwon, M. J., Seo, S. N., Pyun, M. B., Hasan, M., & Hwang, H. (2007). Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures. Applied Physics Letters. https://doi.org/10.1063/1.2436720

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