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Cited by 182

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Semiconducting graphene nanostrips with edge disorder

Gunlycke, D., Areshkin, D. A., White, C. T.·2007·Applied Physics Letters

Abstract

Results of calculations are presented which show that edge disorder can easily transform semiconducting graphene nanostrips into Anderson insulators. However, it is also shown that this problem could be overcome by adjusting the nanostrip aspect ratio to decrease the effects of the edge disorder without making the nanostrip so wide as to close the semiconducting band gap or so short as to allow tunneling through the band gap.

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Metadata

Authors
Gunlycke, D., Areshkin, D. A., & White, C. T.
Venue
Applied Physics Letters
Published
2007-04-02
Volume
90
Issue
14
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2045845090
Cited by
182
References
1
FWCI
9.87
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Semiconducting graphene nanostrips with edge disorder. https://app.cochat.ai/papers/10.1063/1.2718515
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Gunlycke, D., Areshkin, D. A., & White, C. T. (2007). Semiconducting graphene nanostrips with edge disorder. Applied Physics Letters. https://doi.org/10.1063/1.2718515

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.