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Origin of efficiency droop in GaN-based light-emitting diodes
Open accessAbstract
The efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes is investigated. Measurements show that the efficiency droop, occurring under high injection conditions, is unrelated to junction temperature. Furthermore, the photoluminescence output as a function of excitation power shows no droop, indicating that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MQW region. Simulations show that polarization fields in the MQW and electron blocking layer enable the escape of electrons from the MQW region and thus are the physical origin of the droop. It is shown that through the use of proper quaternary AlGaInN compositions, polarization effects are reduced, thereby minimizing droop and improving efficiency.
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Cited by
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Universal phonon mean free path spectra in crystalline semiconductors at high temperature
Freedman, J. P., Leach, J. H., Preble, E. A., Sitar, Z., Davis, R. F., & Malen, J. A. (2013) · Scientific Reports · doi:10.1038/srep02963 · Cited by 171
Metadata
- Authors
- Kim, M.-H., Schubert, M. F., Dai, Q., Kim, J. K., Schubert, E. F., Piprek, J., & Park, Y.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2007-10-29
- Volume
- 91
- Issue
- 18
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W2034186025
- Cited by
- 1,299
- References
- 0
- FWCI
- 45.21
- Type
- journal article
- Language
- en
- Open access
- green
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- Kim, M.-H., Schubert, M. F., Dai, Q., Kim, J. K., Schubert, E. F., Piprek, J., & Park, Y. (2007). Origin of efficiency droop in GaN-based light-emitting diodes. Applied Physics Letters. https://doi.org/10.1063/1.2800290
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