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High figures of merit and natural nanostructures in Mg2Si0.4Sn0.6 based thermoelectric materials

Zhang, Q., He, J., Zhu, T. J., Zhang, S. N., Zhao, X. B., Tritt, T. M.·2008·Applied Physics Letters

Abstract

Mg 2 ( Si , Sn ) compounds have shown great promise for thermoelectric applications due to good thermoelectric properties, nontoxicity, and abundantly available constituent elements. Herein we report on the thermoelectric properties and microstructure of high performance Mg2Si0.4−xSn0.6Sbx (0⩽x⩽0.015) alloys. The state-of-the-art ZT value of ∼1.1 has been attained in the samples with x=0.0075 due to the relatively low thermal conductivity. In light of the simple cubic structure and mostly light constituent elements, the reduction in lattice thermal conductivity has been discussed in connection with a fairly large amount of in situ formed nanostructures in these samples.

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Metadata

Authors
Zhang, Q., He, J., Zhu, T. J., Zhang, S. N., Zhao, X. B., & Tritt, T. M.
Venue
Applied Physics Letters
Published
2008-09-08
Volume
93
Issue
10
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W1489502353
Cited by
273
References
0
FWCI
5.05
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: High figures of merit and natural nanostructures in Mg2Si0.4Sn0.6 based thermoelectric materials. https://app.cochat.ai/papers/10.1063/1.2981516
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Zhang, Q., He, J., Zhu, T. J., Zhang, S. N., Zhao, X. B., & Tritt, T. M. (2008). High figures of merit and natural nanostructures in Mg2Si0.4Sn0.6 based thermoelectric materials. Applied Physics Letters. https://doi.org/10.1063/1.2981516

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