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Cited by 755

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Enhanced thermoelectric figure of merit in nanostructured n-type silicon germanium bulk alloy

Wang, X. W., Lee, H., Lan, Y. C., Zhu, G. H., Joshi, G., Wang, D. Z., Yang, J., Muto, A. J., Tang, M. Y., Klatsky, J., Song, S., Dresselhaus, M. S., Chen, G., Ren, Z. F.·2008·Applied Physics Letters

Abstract

The dimensionless thermoelectric figure of merit (ZT) of the n-type silicon germanium (SiGe) bulk alloy at high temperature has remained at about one for a few decades. Here we report that by using a nanostructure approach, a peak ZT of about 1.3 at 900 °C in an n-type nanostructured SiGe bulk alloy has been achieved. The enhancement of ZT comes mainly from a significant reduction in the thermal conductivity caused by the enhanced phonon scattering off the increased density of nanograin boundaries. The enhanced ZT will make such materials attractive in many applications such as solar, thermal, and waste heat conversion into electricity.

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Crossref · 10.1063/1.3027060

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Metadata

Authors
Wang, X. W., Lee, H., Lan, Y. C., Zhu, G. H., Joshi, G., Wang, D. Z., Yang, J., Muto, A. J., Tang, M. Y., Klatsky, J., Song, S., Dresselhaus, M. S., Chen, G., & Ren, Z. F.
Venue
Applied Physics Letters
Published
2008-11-10
Volume
93
Issue
19
ISSN
  • 0003-6951 (ISSN-L)
  • 1077-3118
OpenAlex
W2082733596
Cited by
755
References
1
FWCI
12.29
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Enhanced thermoelectric figure of merit in nanostructured n-type silicon germanium bulk alloy. https://app.cochat.ai/papers/10.1063/1.3027060
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Wang, X. W., Lee, H., Lan, Y. C., Zhu, G. H., Joshi, G., Wang, D. Z., Yang, J., Muto, A. J., Tang, M. Y., Klatsky, J., Song, S., Dresselhaus, M. S., Chen, G., & Ren, Z. F. (2008). Enhanced thermoelectric figure of merit in nanostructured n-type silicon germanium bulk alloy. Applied Physics Letters. https://doi.org/10.1063/1.3027060

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