The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
Open accessAbstract
We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8000 cm2/V s at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.
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Electric Field Effect in Atomically Thin Carbon Films
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V., & Firsov, A. A. (2004) · Science · doi:10.1126/science.1102896 · Cited by 66,834
Cited by
Shin, S.-H., Ji, S., Choi, S., Pyo, K.-H., Wan An, B., Park, J., Kim, J., Kim, J.-Y., Lee, K.-S., Kwon, S.-Y., et al. (2017) · Nature Communications · doi:10.1038/ncomms14950 · Cited by 203
Metadata
- Authors
- Kim, S., Nah, J., Jo, I., Shahrjerdi, D., Colombo, L., Yao, Z., Tutuc, E., & Banerjee, S. K.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 2009-02-09
- Volume
- 94
- Issue
- 6
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1927677023
- Cited by
- 1,012
- References
- 1
- FWCI
- 35.73
- Type
- journal article
- Language
- en
- Open access
- green
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- Kim, S., Nah, J., Jo, I., Shahrjerdi, D., Colombo, L., Yao, Z., Tutuc, E., & Banerjee, S. K. (2009). Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric. Applied Physics Letters. https://doi.org/10.1063/1.3077021
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